Laboratory calculation of temperature dependences of electrophysical parameters of semiconductors. Calculation of energy parameters of a semiconductor
2. Calculation of the temperature dependences of the electrophysical parameters of semiconductors
In order to calculate the necessary parameters, I entered the necessary values, such as:
Electron charge
rest mass of an atom
Donor level ionization energy
Masses of electrons along the principal axes of ellipsoids
Masses of holes along the principal axes of ellipsoids
Number of valleys in the conduction band
Number of valleys in the valence band
Donor atom concentration
Boltzmann constant
Gap width
Temperature
Planck's constant
This was followed by the need to convert them to the SI system. Now that we have all the data in front of us, we can start with an approximate calculation of the dependence of the electron density on temperature.
2.1 Approximate calculation of the dependence of electron density on temperature
To begin with, I found the average temperature and effective mass of electrons and holes and, which are further needed to calculate the effective density of states in the valence and conduction bands and
3) calculation of the heat capacity cn and the amount of process heat q; 4) calculation of the work of changing the volume l and the external work of the process l`. 5) calculation of changes in thermodynamic functions: a) internal energy, b) enthalpy, c) entropy...
Analysis of the polytropic process of a mixture of ideal gases
The relation for pressures and volumes in the initial and final states follows from (10); relations for temperatures and pressures or temperatures and volumes can be obtained ...
Analysis of modes and selection of the main parameters of the power transmission system
For each standard line section of a given type and voltage, we construct the dependences of the reduced costs on the power Z = f (P). This expression is according to a parabola of the form Z=A+BI2nb, where Inb=. By )