Laboratory calculation of temperature dependences of electrophysical parameters of semiconductors. Calculation of energy parameters of a semiconductor

2. Calculation of the temperature dependences of the electrophysical parameters of semiconductors

In order to calculate the necessary parameters, I entered the necessary values, such as:

Electron charge

rest mass of an atom

Donor level ionization energy

Masses of electrons along the principal axes of ellipsoids

Masses of holes along the principal axes of ellipsoids

Number of valleys in the conduction band

Number of valleys in the valence band

Donor atom concentration

Boltzmann constant

Gap width

Temperature

Planck's constant

This was followed by the need to convert them to the SI system. Now that we have all the data in front of us, we can start with an approximate calculation of the dependence of the electron density on temperature.

2.1 Approximate calculation of the dependence of electron density on temperature

To begin with, I found the average temperature and effective mass of electrons and holes and, which are further needed to calculate the effective density of states in the valence and conduction bands and

3) calculation of the heat capacity cn and the amount of process heat q; 4) calculation of the work of changing the volume l and the external work of the process l`. 5) calculation of changes in thermodynamic functions: a) internal energy, b) enthalpy, c) entropy...

Analysis of the polytropic process of a mixture of ideal gases

The relation for pressures and volumes in the initial and final states follows from (10); relations for temperatures and pressures or temperatures and volumes can be obtained ...

Analysis of modes and selection of the main parameters of the power transmission system

For each standard line section of a given type and voltage, we construct the dependences of the reduced costs on the power Z = f (P). This expression is according to a parabola of the form Z=A+BI2nb, where Inb=. By )